SiC Substrate
Bayani
Silicon carbide (SiC) fili ne na binary na Rukunin IV-IV, shine kawai tsayayyen fili mai ƙarfi a cikin Rukunin IV na Tebur na lokaci-lokaci, Yana da mahimmancin semiconductor.SiC yana da kyakkyawar thermal, inji, sinadarai da kayan lantarki, wanda ya sa ya zama ɗayan mafi kyawun kayan don yin babban zafin jiki, mai ƙarfi, da na'urorin lantarki masu ƙarfi, SiC kuma ana iya amfani da shi azaman kayan haɓaka. don tushen GaN shuɗi masu fitar da haske mai haske.A halin yanzu, 4H-SiC shine samfuran al'ada a kasuwa, kuma nau'in haɓakawa ya kasu kashi-kashi-insulating nau'in da nau'in N.
Kayayyaki
| Abu | 2 inch 4H N-type | ||
| Diamita | 2 inch (50.8mm) | ||
| Kauri | 350+/-25um | ||
| Gabatarwa | kashe axis 4.0˚ zuwa <1120> ± 0.5˚ | ||
| Hanyar Farko ta Flat | <1-100> ± 5° | ||
| Flat na sakandare Gabatarwa | 90.0˚ CW daga Primary Flat ± 5.0˚, Si Face up | ||
| Tsawon Lantarki na Farko | 16 ± 2.0 | ||
| Tsawon Lantarki na Sakandare | 8 ± 2.0 | ||
| Daraja | Matsayin samarwa (P) | Matsayin bincike (R) | Babban darajar (D) |
| Resistivity | 0.015 ~ 0.028 Ω · cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Maƙarƙashiya Maɗaukaki | ≤ 1 micropipes/cm² | ≤ 1 0 micropipes/cm² | ≤ 30 micropipes/cm² |
| Tashin Lafiya | Si fuskantar CMP Ra <0.5nm, C Face Ra <1 nm | N/A, yanki mai amfani> 75% | |
| TTV | <8 ku | <10 ku | <15 ku |
| Ruku'u | <±8 ku | <± 10um | <± 15um |
| Warp | <15 ku | <20 ku | <25 ku |
| Karas | Babu | Tsayin tarawa ≤ 3 mm | Tsayin tarawa ≤10mm, |
| Scratches | ≤ 3 karce, tarawa | ≤ 5 karce, tarawa | ≤ 10 karce, tarawa |
| Hex Plates | mafi girman faranti 6, | matsakaicin faranti 12, | N/A, yanki mai amfani> 75% |
| Yankunan Polytype | Babu | Tarin yanki ≤ 5% | Tarin yanki ≤ 10% |
| Gurbata | Babu | ||
