GaAs Substrate
Bayani
Gallium Arsenide (GaAs) ƙungiya ce mai mahimmanci kuma balagagge ta III-Ⅴ fili semiconductor, ana amfani dashi ko'ina a fagen optoelectronics da microelectronics.GaAs galibi ya kasu kashi biyu: GaAs masu rufewa da kuma nau'in GaAs.Ana amfani da GaAs masu rufewa da yawa don yin haɗin kai tare da tsarin MESFET, HEMT da HBT, waɗanda ake amfani da su a cikin hanyoyin sadarwa na radar, microwave da millimita, kwamfutoci masu saurin sauri da hanyoyin sadarwa na fiber gani.GaA-nau'in nau'in N ana amfani da shi a cikin LD, LED, kusa da infrared lasers, adadi mai ƙarfi mai ƙarfi da ƙwayoyin hasken rana masu inganci.
Kayayyaki
| Crystal | Doped | Nau'in Gudanarwa | Matsakaicin Rarraba cm-3 | Girman cm-2 | Hanyar Girma |
| Ga | Babu | Si | / | <5×105 | LEC |
| Si | N | > 5×1017 | |||
| Cr | Si | / | |||
| Fe | N | ~2×1018 | |||
| Zn | P | > 5×1017 |
GaAs Substrate Definition
GaAs Substrate yana nufin wani abu na gallium arsenide (GaAs) crystal abu.GaAs wani abu ne mai haɗaɗɗiyar fili wanda ya ƙunshi gallium (Ga) da abubuwan arsenic (As).
Ana amfani da ma'aunin GaAs sau da yawa a fagen lantarki da optoelectronics saboda kyawawan kaddarorin su.Wasu mahimman kaddarorin na GaAs sun haɗa da:
1. High electron motsi: GaAs yana da mafi girma electron motsi fiye da sauran na kowa semiconductor kayan kamar silicon (Si).Wannan halayyar ta sa GaAs substrate ya dace da kayan aikin lantarki mai ƙarfi mai ƙarfi.
2. Direct band gap: GaAs yana da tazarar band ta kai tsaye, wanda ke nufin ingantaccen fitarwar haske na iya faruwa lokacin da electrons da ramuka suka sake haɗuwa.Wannan sifa ta sa kayan aikin GaAs ya dace don aikace-aikacen optoelectronic kamar haske mai fitar da diode (LEDs) da lasers.
3. Wide Bandgap: GaAs yana da babban bandgap fiye da silicon, yana ba shi damar yin aiki a yanayin zafi mafi girma.Wannan kadarar tana ba da damar na'urorin tushen GaAs don yin aiki da kyau a cikin yanayin zafi mai ƙarfi.
4. Ƙananan ƙararrawa: GaAs substrates suna nuna ƙananan matakan amo, suna sa su dace da ƙananan ƙararrawa da sauran aikace-aikacen lantarki masu mahimmanci.
GaAs substrates ana amfani da ko'ina a cikin lantarki da na'urorin optoelectronic, ciki har da transistor masu sauri, microwave hadedde circuits (ICs), photovoltaic cell, photon detectors, da hasken rana Kwayoyin.
Ana iya shirya waɗannan kayan aikin ta amfani da dabaru daban-daban kamar Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) ko Liquid Phase Epitaxy (LPE).Hanyar haɓaka ta musamman da aka yi amfani da ita ya dogara da aikace-aikacen da ake so da kuma ingancin buƙatun gaAs substrate.
